UGE212 💎 Jph06268318A 半導体レーザ Google Patents

UGE212   UGE212 UGE212 57 要約 目的 本発明は pクラッド層のキャリア濃度を十分 に高くし レーザの温度特性の改善をはかり得るing aalp系の半導体レーザを提供することを目的とす る 構成 半導体基板101上にin 1-y ga 1-z a lz y p系材料 0 y 1 0 z 1 からなる 活性層104をクラッド層103 105で挟ん

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